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| STP90NF03L STB90NF03L-1 N-CHANNEL 30V - 0.0056 - 90A TO-220/I2PAK LOW GATE CHARGE STripFETTM POWER MOSFET TYPE STP90NF03L STB90NF03L-1 s s s s s VDSS 30 V 30 V RDS(on) < 0.0065 < 0.0065 ID 90 A 90 A TYPICAL RDS(on) = 0.0056 TYPICAL Qg = 35 nC @ 5V OPTIMAL R DS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED 3 1 2 3 12 TO-220 I2PAK DESCRIPTION This application specific Power Mosfet is the third generation of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. INTERNAL SCHEMATIC DIAGRAM s APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS ORDERING INFORMATION SALES TYPE STP90NF03L STB90NF03L-1 MARKING P90NF03L B90NF03L PACKAGE TO-220 I2PAK PACKAGING TUBE TUBE April 2003 1/9 STP90NF03L/STB90NF03L-1 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 30 30 20 90 65 360 150 0.73 -65 to 175 175 Unit V V V A A A W W/C C C ( ) Pulse width limited by safe operating area THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1 62.5 300 C/W C/W C ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) ON /OFF Symbol V(BR)DSS IDSS IGSS ID(on) VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) On State Drain Current Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V VDS > ID(on) x RDS(on)max, VGS = 10V VDS = VGS, ID = 250 A VGS = 10V, ID = 45 A VGS = 5V, ID = 45 A 90 1 0.0056 0.007 2.5 0.0065 0.012 Min. 30 1 10 100 Typ. Max. Unit V A A nA A V 2/9 STP90NF03L/STB90NF03L-1 ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 45 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 40 2700 860 170 Max. Unit S pF pF pF SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15V, ID = 45 A RG = 4.7 VGS = 4.5 V (see test circuit, Figure 3) VDD = 24V, ID = 90 A,VGS = 5V Min. Typ. 30 200 35 10 18 47 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 1 5V, ID = 45 A, RG = 4.7, VGS = 4.5 V (see test circuit, Figure 3) Min. Typ. 50 105 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 90 A, VGS = 0 ISD = 90 A, di/dt = 100A/s, VDD = 15V, Tj = 150C (see test circuit, Figure 5) 80 90 2.5 Test Conditions Min. Typ. Max. 90 360 1.3 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/9 STP90NF03L/STB90NF03L-1 Safe Operating Area Thermal Impedence Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/9 STP90NF03L/STB90NF03L-1 Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STP90NF03L/STB90NF03L-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STP90NF03L/STB90NF03L-1 TO-220 MECHANICAL DATA mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 oP Q 7/9 STP90NF03L/STB90NF03L-1 TO-262 (I2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D e E L L1 L2 4.4 2.49 0.7 1.14 0.45 1.23 8.95 2.4 10 13.1 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 2.7 10.4 13.6 3.78 1.4 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055 DIM. A C2 B2 B E L1 L2 D L P011P5/E 8/9 e A1 C STP90NF03L/STB90NF03L-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 9/9 |
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